Characterization of the capacitive coupling in a linear array of four quantum dots

The capacitive coupling strength g between two pairs of quantum dots is critical for performing capacitively-coupled two-qubit gates.  Here we characterize both the strength and the tunability of this capacitive coupling in a highly-stable quadruple quantum dot array of gate-define, Si/SiGe quantum dots.

“Measurements of capacitive coupling within a quadruple quantum dot array.” S. F. Neyens, E. R. MacQuarrie, J. P. Dodson, J. Corrigan, Nathan Holman, B. Thorgrimsson, M. Palma, T. McJunkin, L. F. Edge, Mark Friesen, S. N. Coppersmith, and M. A. Eriksson, Phys. Rev. Applied 12, 064049 (2019)

Read the full article at: https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.12.064049